“It’s exciting to see Integra’s 100V RF GaN products move into production with customers as it signifies another industry first.” “In collaboration with our customers, our system engineers have helped design new radar architectures that take full advantage of the benefits of our third-generation 100V RF GaN technology,” says Integra’s VP of sales & marketing Tom Kole. Integra Technologies Inc (ITI) of El Segundo, CA, USA, which provides RF and microwave high-power semiconductor and pallet solutions for mission-critical applications (including radar, electronic warfare and advanced communications systems), has begun production shipments to US and European customers of its 100V RF gallium nitride (GaN) technology. June 2022 Integra begins production shipments of first 100V RF GaN products
ABOUT INTEGRA TECHNOLOGIES, INC.įounded in 1997, Integra is a leading innovator of RF and Microwave high power semiconductor and pallet solutions for mission-critical applications, including state-of-the-art radar, electronic warfare, and advanced communications systems. Teledyne e2v HiRel Electronics is part of the Teledyne Defense Electronics Group. Teledyne e2v’s unique approach involves listening to the market and to the application challenges of customers and partnering with our customers to provide innovative standard, semi-custom or fully custom solutions, bringing increased value to their systems. Teledyne e2v HiRel innovations lead developments in space, transportation, defense, and industrial markets. High Efficiency - up to 75% during the RF pulse Ideal for L-band Avionics IFF & SSR Systems
“Adding additional screening and qualifications for the new devices will assure long operational life in even the harshest environments.” “Our most demanding customers are requesting higher power density RF power devices,” said Brad Little, VP and General Manager of Teledyne e2v HiRel.
Teledyne HiRel will provide further assurance for military and new space applications. Teledyne will qualify Integra’s first 100V product, the IGN1011S3600, which offers 3.6 kW at 1,030 and 1,090 MHz, greater than 19 dB of gain and up to 75% efficiency. Integra’s newly announced 100V RF GaN/SiC gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry compared to the more commonplace 50V and 65V GaN technologies. (Integra) new 100V Gallium Nitride on Silicon Carbide (GaN/SiC) power transistors. MILPITAS, Calif.-( BUSINESS WIRE)-Teledyne e2v HiRel Electronics, a leading provider of high reliability semiconductor solutions, today announced that it will be offering High Reliability qualified versions of California-based Integra Technologies, Inc.
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